| 型号 | 厂商 | 批号 | 封装 | 说明 | 
			| CL10C220JB8NNNC | SAMSUNG | 10+ | NA | CAP SMT 22PF 50V 5% NPO 0603 | 
			| CL10B105KO8NNNC | Samsung | 10+ | SMD | 1NF 50V X7R CAPACITY, CERAMIC CMS0603 | 
			| CL32A106KATLNNE | SAMSUNG | 10+ |  | : INDUCTORS FOR POWER LINE SMD | 
			| CL31A226MQHNNNE | SAMSUNG | 10+ | SMD | SILICON TRANSISTORS | 
			| CL05B103KO5NNNC | SAMSUNG | 10+ | SMD | CAP. CER .01MFD 16V 10% X7R | 
			| CL05B104KO5NNNC | SAMSUNG | 10+ | SMD | CAP,SMT,0402,100N,10%,16V,X7R | 
			| CL31B475KAHNNNE | SAMSUNG | 10+ |  | CAPACITOR, 0.47UF/25V 1206 20% | 
			| CL32B226MQJNNNE | SAMSUNG | 10+ | SMD | Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin | 
			| CL21A475KPFNNNE | SAMSUNG | 10+ | SMD | CAP 22PF 50V 5% NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN | 
			| CL31B106KOHNNNE | SAMSUNG | 10+ | SMD | CAP CER 1000PF 10% 50V X7R 1206 | 
			| CL31C391JBCNNNC | SAMSUNG | 10+ | SMD | SILICON TRANSISTORS | 
			| CL10A106MQ8NNNC | SAMSUNG | 10+ | SMD | Extremely Low Forward Voltage drop Diode | 
			| CL31B104KBCNNNC | SAMSUNG | 10+ | SMD | CAP,CER ML,0.1UF,X7R,1206 | 
			| CL32B106KAULNNE | SAMSUNG | 10+ | SMD | Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin | 
			| CL32A476MQJNNNE | SAMSUNG | 10+ |  | INDUCTORS FOR POWER LINE SMD | 
			| CL32A226MOJNNNE | SAMSUNG | 10+ | SMD | INDUCTORS FOR POWER LINE SMD | 
			| CL10A226MQ8NRNE | SAMSUNG | 10+ | SMD | Extremely Low Forward Voltage drop Diode | 
			| CL31B474KBHNNNE | SAMSUNG | 10+ | SMD | CAPACITOR, 0.47UF/25V 1206 20% | 
			| CL32A107MQVNNNE | SAMSUNG | 10+ | SMD |  | 
			| CL10B474KO8NNNC | SAMSUNG | 10+ | 0603 | 470 PF 10% 50V X7R 0603 CHIP CAP |