| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
BZX79-C5V1,133
| NXP | 10+ | SOD27 | Voltage regulator diodes |
|
BAS35,215
| NXP | 10+ | SOT23 | NPN General Purpose Silicon Transistor(NPN通用晶体管 |
|
BCX70K,215
| NXP | 10+ | | NPN General Purpose Silicon Transistor(NPN通用晶体管) |
|
BAT54,215
| NXP | 10+ | SOT23-3 | Schottky Barrier Diode(肖特基势垒二极管) |
|
1N4148,113
| NXP | 10+ | DO35 | Silicon Epitaxial Planar Diodes |
|
BAV23,215
| NXP | 10+ | Tape | General Purpose Double Diode(双通用二极管) |
|
BC847BS,115
| NXP | 10+ | SOT-23 | NPN general purpose double transistor(NPN通用型双晶体管) |
|
BZV55-C8V2,115
| NXP | 10+ | PBFREE | Voltage regulator diodes |
|
PMBD7000,215
| NXP | 10+ | PBFREE | High-Speed Double Diode(双高速二极管 |
|
PMBT2222A,215
| NXP | 10+ | 11+ | NPN switching transistors |
|
BAS70,215
| NXP | 10+ | Tape | Schottky Barrier (Double) Diodes(肖特基势垒（双）二极管) |
|
BAS21,215
| NXP | 10+ | SOT-23 | General purpose diodes(通用二极管) |
|
BC847B,215
| NXP | 10+ | SOT-223 | NPN General Purpose Transistor |
|
BAS316,115
| NXP | 10+ | Tape | High-speed diodes( 高速二极管) |
|
BC857B,215
| NXP | 10+ | Tape | PNP General Purpose Transistor(PNP通用晶体管) |
|
BC817-40,215
| NXP | 10+ | SOT23 | NPN General Purpose Amplifier(NPN通用放大器) |
|
PH4830L,115
| NXP | 10+ | Standardpac | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V |
|
BC869,115
| NXP | 10+ | SOT89 | PNP medium power transistor(PNP中等功率晶体管) |
|
BAV99S,115
| NXP | 10+ | Tape | High Speed Switching Diodes; Package: PG-SOT363-6; Configuration: Quadruple; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 150.0 nA; trr (max): 4.0 |
|
BAS16,215
| NXP | 10+ | SOT23-3 | High-speed diodes( 高速二极管) |