| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
MMUN2214LT1G
| LRC | 10+ | SOT-23 | Bias Resistor Transistor |
|
SUD40N10-25-E3
| SIX | 10+ | SOP-8 | MOSFET; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process |
|
SI4463BDY-T1-E3
| VISHAY | 10+ | SOP-8 | MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.014ohm; Package/Case:8-SOIC; Leaded Process Compatib |
|
MMSZ5270BT1G
| ON | 10+ | SOD-123 | Zener Voltage Regulators |
|
IRFP450PBF
| IR | 13+ | TO-247 | 大功率MOS管 |
|
PH4830L,115
| NXP | 10+ | Standardpac | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V |
|
BZG03C33TR
| 11+PB | 10+ | DO-214AC | 4.096V Micropower, Precisions Series Mode Voltage References; Package: SOT-23; No of Pins: 3; Temperature Range: Industrial |
|
SI4840DY-T1-E3
| VISHAY | 10+ | SOP-8 | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test Vol |
|
SI6433BDQ-T1-E3
| VISHAY | 10+ | TSSOP8 | 20V P-Channel PowerTrench MOSFET |
|
BC856B,215
| PH | 10+ | NA | Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; VCEO (max): 65.0 V; VCBO (max): 80.0 V; IC(max): 100.0 mA; ICM (max): 200.0 mA; |