型号 | 厂商 | 批号 | 封装 | 说明 |
BC817-40,215
| NXP | 10+ | SOT23 | NPN General Purpose Amplifier(NPN通用放大器) |
PH4830L,115
| NXP | 10+ | Standardpac | N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V |
BZG03C33TR
| 11+PB | 10+ | DO-214AC | 4.096V Micropower, Precisions Series Mode Voltage References; Package: SOT-23; No of Pins: 3; Temperature Range: Industrial |
SI4840DY-T1-E3
| VISHAY | 10+ | SOP-8 | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test Vol |
SI6433BDQ-T1-E3
| VISHAY | 10+ | TSSOP8 | 20V P-Channel PowerTrench MOSFET |
STP150NF55
| ST | 10+ | TO-220 | -CHANNEL 55V - 0.005 ohm -120A DPAK/TO-220/TO-247 STripFET⑩ II POWER MOSFET |
BC869,115
| NXP | 10+ | SOT89 | PNP medium power transistor(PNP中等功率晶体管) |
BCW72LT1G
| ON | 10+ | SOT-23 | General Purpose Transistor NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 |
SI4946BEY-T1-E3
| VIS | 10+ | VIS | Dual N-Channel 60-V (D-S) 175ºC MOSFET |
BAV99S,115
| NXP | 10+ | Tape | High Speed Switching Diodes; Package: PG-SOT363-6; Configuration: Quadruple; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 150.0 nA; trr (max): 4.0 |