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编号	制造商	批号	说明	库存	询价
DSI45-12A	IXYS	14+	全新原装超快速恢复二极管	有库存	询价
MBRB20200CT	ON	12+	快恢复二极管	有库存	询价
RHRD660	FAIRCHILD	10+	6A, 600V Hyperfast Diodes(6A,600V 超快速二极管)	有库存	询价
IRG4BC20KD-SPBF	IR	10+	恢复二极管INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE	有库存	询价
IPS2041LTRPBF	IR	2010+	智能功率低侧开关INTELLIGENT POWER LOW SIDE SWITCH	有库存	询价
SI4410DYTRPBF	IR	2010+	30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to SI4410DYTR with Lead Free Packaging on Tape and Reel	有库存	询价
IRFIZ44NPBF	IR	2010+	HEXFET Power MOSFET	有库存	询价
IRFB3307ZPBF	IR	2010+	HEXFET Power MOSFET	有库存	询价
IRG4IBC20FDPBF	IR	2010+	绝缘栅双极型晶体管，超快软恢复二极管INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	有库存	询价
IRFR2405TRPBF	IR	2011	55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR2405TR with Lead Free Packaging on Tape and Reel	有库存	询价
IRF1503SPBF	IR	2011	HEXFET Power MOSFET	有库存	询价
IRG4PSC71UDPBF	IR	2011	绝缘栅双极型晶体管，超快软恢复二极管 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	有库存	询价
IKW03N120H2	INFINEON	10+	IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°:	有库存	询价
IKP20N60T	INFINEON	10+	低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管	有库存	询价
IKP15N60T	INFINEON	10+	低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管	有库存	询价
IKP10N60T	INFINEON	10+	低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管	有库存	询价
IKP06N60T	INFINEON	10+	低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管	有库存	询价
IKP04N60T	INFINEON	10+	低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管	有库存	询价
IKP03N120H2	INFINEON	10+	IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°:	有库存	询价
IKP01N120H2	INFINEON	10+	IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°:	有库存	询价