描述
The LT®3150 drives a low cost external N-channel MOSFET as a source follower to produce a fast transient response, very low dropout voltage linear regulator. LT®3150驱动器的低成本外部N沟道MOSFET的源跟随器产生一个快速的瞬态响应，非常低压差线性稳压器。 Selection of the N-channel MOSFET R DS(ON) allows dropout voltages below 300mV for low V IN to low V OUT applications.选择的N沟道MOSFET的R DS（ON），可以应用到低V低V OUT电压低于300mV的压差。
The LT3150 includes a fixed frequency boost regulator that generates gate drive for the N-channel MOSFET. LT3150包含一个固定频率的升压稳压器，生成N沟道MOSFET栅极驱动。 The internally compensated current mode PWM architecture combined with the 1.4MHz switching frequency permits the use of tiny, low cost capacitors and inductors. 1.4MHz的开关频率相结合，内部补偿的电流模式PWM架构允许使用纤巧，低成本电容器和电感器。
The LT3150's transient load performance is optimized with ceramic output capacitors. LT3150的瞬态负载性能进行了优化与陶瓷输出电容器。 A precision 1.21V reference accommodates low voltage supplies.一个精确的1.21V参考适应低电压电源。
Protection includes a high side current limit amplifier that activates a fault timer circuit.保护包括高侧电流限制放大器，激活故障定时器电路。 A multifunction shutdown pin provides either current limit time-out with latchoff, overvoltage protection or thermal shutdown.闭锁，过压保护或热关断任何一个多功能的停机引脚提供电流限制超时。 Independent shutdown control of the boost converter provides on/off and sequencing control of the LDO output voltage.独立的关断控制的升压转换器提供/关闭和测序LDO的输出电压控制。