| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
FDN360P
| FAIRCHILD | 2010+ | SOT-23 | Single P-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel |
|
FDN361BN
| FAIRCHILD | 2010+ | SOT23-3 | 30V N-Channel, Logic Level, PowerTrench MOSFET |
|
FDMS7692
| FAIRCHILD | 2010+ | PQFN8 | 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
|
FDS6681Z
| FAIRCHILD | 2010+ | SOP-8 | 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel |
|
NDS9957
| FAIRCHILD | 2010+ | SOP-8 | Dual N-Channel Enhancement Mode Field Effect Transistor（2.6A，60V，0.16Ω）(双N沟道增强型场效应管（漏电流2.6A, 漏源电压60V，导通电阻0.16Ω）) |
|
HUFA76413DK8T
| FAIRCHILD | 2010+ | SOP-8 | N沟道逻辑电平UltraFET功率MOSFET 60V的4.8A，56mз |
|
FDS9945
| FAIRCHILD | 2010+ | SOP-8 | 60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel |
|
FDMS2572
| FAIRCHILD | 2010+ | QFN-56 | N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
|
SFP9540
| FAIRCHILD | 2010+ | TO-220 | P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管) |
|
RFP70N06
| FAIRCHILD | 2010+ | TO-220 | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail |
|
RFD16N05LSM
| FAIRCHILD | 2010+ | TO-252 | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管) |
|
RFD14N05LSM9A
| FAIRCHILD | 2010+ | TO-252 | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
RFD14N05LSM
| FAIRCHILD | 2010+ | TO-252 | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
RFD14N05L
| FAIRCHILD | 2010+ | TO-251 | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管) |
|
NDT451AN
| FAIRCHILD | 2010+ | SOT-223 | N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）) |
|
NDS356AP
| FAIRCHILD | 2010+ | SOT-23-3 | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）) |
|
NDS355AN
| FAIRCHILD | 2010+ | SOT-23-3 | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻0.125Ω）) |
|
NDS352AP
| FAIRCHILD | 2010+ | SOT-23-3 | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P沟道逻辑增强型MOS场效应管（漏电流-0.9A, 漏源电压-30V，导通电阻0.5Ω）) |
|
FDN5630_NL
| FAIRCHILD | 2010+ | SOT-23 | 60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel |
|
MTP3055VL
| FAIRCHILD | 2010+ | TO-220 | N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail |