型号 | 厂商 | 批号 | 封装 | 说明 |
SPB35N10
| INFINEON | 10+ | P-TO263-3 | 25mA 2.2V 功率场效应管 |
SPB21N10
| INFINEON | 10+ | P-TO263-3 | 功率场效应管 |
SPB10N10
| INFINEON | 10+ | TO-263 | CAP 1000PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
IPUH6N03LB
| INFINEON | 10+ | TO-251 | 25.0 V 50.0 A N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPUH6N03LA
| INFINEON | 10+ | TO-251 | 25.0 V 50.0 A N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU78CN10N
| INFINEON | 10+ | TO-251 | N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU13N03LA
| INFINEON | 10+ | TO-251 | 25.0 V; 30.0 A N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU10N03LA
| INFINEON | 10+ | TO-251 | 30.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU09N03LB
| INFINEON | 10+ | TO-251 | 30.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU09N03LA
| INFINEON | 10+ | TO-251 | 25.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU06N03LB
| INFINEON | 10+ | TO-251 | 25.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU06N03LA
| INFINEON | 10+ | TO-251 | 25.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU05N03LA
| INFINEON | 10+ | TO-251 | 25.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU04N03LB
| INFINEON | 10+ | TO-251 | 25.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU04N03LA
| INFINEON | 10+ | TO-251 | 25.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPU039N03L
| INFINEON | 10+ | TO-251 | 30.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPSH9N03LA
| INFINEON | 10+ | TO-251 | 25.0 V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPSH6N03LB
| INFINEON | 10+ | TO251-3 | 30V N通道场效应管 OptiMOS㈢2 Power-Transistor |
IPSH6N03LA
| INFINEON | 10+ | P-TO251-3 | N沟道场效应管N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) ( |
IPSH5N03LA
| INFINEON | 10+ | P-TO251-3 | N沟道场效应管 OptiMOS㈢2 Power-Transistor |