| 型号 | 厂商 | 批号 | 封装 | 说明 |
|
IRLR024TRPBF
| IR | 11+ | TO-252/D-PAK | HEXFET Power MOSFET(HEXFET 功率MOS场效应管) |
|
IRLR024TRR
| IR | 11+ | TO-252/D-PAK | HEXFET Power MOSFET(HEXFET 功率MOS场效应管) |
|
IRLR110
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
|
IRLR110PBF
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
|
IRLR110TR
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
|
IRLR110TRL
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
|
IRLR110TRLPBF
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
|
IRLR110TRPBF
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
|
IRLML0030TRPBF
| IR | 11+ | SOT23-3 | 增强场效应晶体管逻辑电平 |
|
IRFBC20
| IR | 2010+ | TO-220 | 功率MOSFET (Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) |
|
IRF5210STRLPBF
| IR | 09+ | TO-263 | N通道场效应管HEXFET Power MOSFET |
|
IRF5210STRRPBF
| IR | 09+ | TO-263 | N通道场效应管HEXFET Power MOSFET |
|
IRF9530NSTRLPBF
| IR | 2010+ | TO-263 | 100V N通道场效应管-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9530NSTRL with Lead Free Packaging |
|
IRF9530NSPBF
| IR | 2010+ | TO-263 | N通道场效应管 Advanced Process Technology Surface Mount |
|
IRF9520NSTRRPBF
| IR | 2010+ | D2 PAK | 100V N通道场效应管 -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9520NSTRR with Lead Free Packaging |
|
IRF9520NSTRLPBF
| IR | 2010+ | TO-263 | N通道场效应管 HEXFET㈢ Power MOSFET |
|
IRF9520NSPBF
| IR | 2010+ | D2-pak | N通道场效应管 HEXFET㈢ Power MOSFET |
|
IRF6218PBF
| IR | 2010+ | TO-220 | N通道场效应管 HEXFET㈢ Power MOSFET |
|
IRF6216PBF
| IR | 2010+ | SOP-8 | N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF6216 with Standard Packaging |
|
IR1150IPBF
| IR | 10+ | DIP-8 | IR1150IPBF,场效应管 |