主页 > 产品中心 > 场效应管
IRF9Z24NSTRLPBF
产品图片仅供参考
欢迎索取产品详细资料

IRF9Z24NSTRLPBF

  • 所属类别：场效应管
  • 产品名称：-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NS with Lead Free Packaging
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRF9Z24NSTRLPBF的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IRF9Z24NSTRLPBF   -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NS with Lead Free Packaging

与IRF9Z24NSTRLPBF相关的IC还有：


型号厂商批号封装说明
IRF4905SPBF IR10+TO-263HEXFET Power MOSFET
IRF5305STRRPBF IR10+D2-pakHEXFET Power MOSFET
IRF5305SPBF IR10+D2-pakHEXFET Power MOSFET
IRF9Z34NSTRRPBF IR10+D2-pakAdvanced Process Technology
IRF9Z34NSPBF IR10+D2-pakAdvanced Process Technology
IRF9Z24NSPBF IR10+TO-263-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NS with Lead Free Packaging
IRF9Z24NSTRRPBF IR10+D2PAK-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NSTRR with Lead Free Packaging
IRF9520NPBF IR10+TO-251HEXFET Power MOSFET
IRFU5410PBF IR10+TO-251HEXFET Power MOSFET
IRFU9120NPBF IR10+TO-251LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; P

热门搜索


型号厂商批号封装说明
Wilcoxon786A-50 Amphenol Wilcoxon Sensing Technologies25+传感器Wilcoxon 786A-50传感器，变送器 运动传感器 加速度计
GTC6L20M1SC74B1(20)LRK JAE Electronics25+连接器Standard Circular Connector
D-U201-K1C Mors Smitt France Sas25+继电器带4个触点的瞬时继电器
ABMP17T28M13PM6V0N AB Connectors25+连接器High Speed and Signal Data Connector
0443660000 Weidmuller25+连接器DIN, 2, 10-26AWG
DGG-U204-Q Mors Smitt25+继电器Plug-in railway relay with 2 C/O contacts
ISP0335V2M1-FZ500R65KE3 Power Integrations24+驱动器栅极驱动器 ONLY for Infineon FZ500R65KE3 module
J00041A0917 TELEGÄRTNER24+连接器multipin B20 DIN41622 str
609-1024ES TE24+连接器Headers & Wire Housings - 10P - Header - Long- Latch
ESB18150-S-1 POWERGOOD25+DC模块ESB Series 20W / 1.6” x 1” DC/DC
SSDN-10 T&M25+DIPT&M同轴分流器
ABCIRH03T2214PCWF80M32V0 AB Connectors25+连接器onnector Reverse Bayonet Coupling Circular RCP 14S-5 ST Box Mount - Bulk
GTC6L-20-M1SC-74B1-（20）-L-G-PMA JAE Electronics24+连接器Standard Circular Connector
483KGCAE2A 新塘25+QFP128RISC Microcontroller, 32-Bit, FLASH, CORTEX-M4F CPU, 192MHz, CMOS, PQFP128
FRCIR06R36-5P-F80T39-78-M40F ITT Interconnect Solutions24+连接器Circular MIL Spec Connector
FRCIR02R36-6S-F80T39-78-G1 ITT Interconnect Solutions24+连接器Circular MIL Spec Connector
B80K460 Epcos25+传感器SIOV metal oxide varistors
ABMP17T28M13PV0N TT Electronics plc24+连接器ABMP17T28M13PVON /RAIL AND MILITARY LAND SYSTEMS
HC-SN100V4B15 KOHSHIN25+DIP电流传感器
ABCIRP03T1819SV0N AB Connectors24+连接器CONN RCPT HSG FMALE 10POS PNL MT

IR品牌产品推荐


型号厂商批号封装说明
IRF9Z24NSPBF IR10+TO-263-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NS with Lead Free Packaging
IRF9Z24NSTRRPBF IR10+D2PAK-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z24NSTRR with Lead Free Packaging
IRF9520NPBF IR10+TO-251HEXFET Power MOSFET
IRFU5410PBF IR10+TO-251HEXFET Power MOSFET
IRFU9120NPBF IR10+TO-251LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; P
IRFR5410TRLPBF IR10+TO-252HEXFET Power MOSFET
IRFR5410TRRPBF IR10+TO-252HEXFET Power MOSFET
IRFR5410PBF IR10+TO-252HEXFET Power MOSFET
IRFR9120NTRRPBF IR10+SOT-263P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管)
IRFR9120NCTRPBF IR10+SOT-263P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管)
IRF5210LPBF IR10+SOT-263HEXFET Power MOSFET
IRF9540NLPBF IR10+SOT-263HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A )
IRF9530NLPBF IR10+TO-262Advanced Process Technology Surface Mount
IRF9520NLPBF IR10+TO-235-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9520NL with Lead Free Packaging
IRF633 IR10+TO-220N-Channel Power MOSFETs, 12A, 150-200 V
IRF632 IR10+TO-220N-Channel Power MOSFETs, 12A, 150-200 V
IRF631 IR10+TO-220N-Channel Power MOSFETs, 12A, 150-200 V
IRF634STRRPBF IR10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634STRR IR10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634STRLPBF IR10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号