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BSC047N08NS3
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BSC047N08NS3

  • 所属类别：场效应管
  • 产品名称：N沟道 80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
  • 厂商：INFINEON
  • 生产批号：11+
  • 封装：TDSON-8
  • 库存状态：有库存
  • 库存量：35000
  • 最低订购量：1
  • 详细资料：点击查找BSC047N08NS3的pdf资料
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  • 产品介绍

BSC047N08NS3  N沟道 80.0 V   100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A

与BSC047N08NS3相关的IC还有：


型号厂商批号封装说明
BSC032N03SG INFINEON11+TDSON-8N沟道 30.0 V 100.0 A;场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.2 mOhm; R
BSC079N03S INFINEON11+SOP-8N沟道 30.0 V 40.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RD
BSC057N08NS3 INFINEON11+SON-8N沟道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LS INFINEON11+P-TDSON-8N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC100N03MS INFINEON11+P-TDSON-8N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC090N03MS INFINEON11+SON-8N沟道 30.0 V 48.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS
BSC080N03MS INFINEON11+TDSON-8N沟道 30.0 V 53.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS
BSC057N03LS INFINEON11+TDS0N-8N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC057N03MS INFINEON11+TDS0N-8N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC059N03S INFINEON11+TDS0N-8N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS

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型号厂商批号封装说明
BSC090N03MS INFINEON11+SON-8N沟道 30.0 V 48.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS
BSC080N03MS INFINEON11+TDSON-8N沟道 30.0 V 53.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS
BSC057N03LS INFINEON11+TDS0N-8N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC057N03MS INFINEON11+TDS0N-8N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC059N03S INFINEON11+TDS0N-8N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC031N06NS3 INFINEON11+SuperSO8N沟道 60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (o
BSC100N10NSF INFINEON10+TDS0N-8100.0 V 90.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC082N10LS INFINEON10+TSSOP-20100.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm;
BSC020N03LS INFINEON10+TDSON-830.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
BSC020N03MS INFINEON10+TDSON-830.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
BSC025N03MS INFINEON2011+TDSON-8N通道 30.0 V 100.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC027N03S INFINEON2011+TDSON-8N通道 30.0 V 100.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC060N10NS3 INFINEON2011+TDSON-8N通道100.0 V 90.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm;
BSC057N08NS3G INFINEON2011+TDSON-8N通道，80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LSG INFINEON2011+TDSON-8N通道，30.0 V 44.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON10+TDSON-8N通道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON10+TDSON-8N通道 30.0 V 47.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON10+TDSON-8N通道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC080N03MSG INFINEON10+TDSON-8N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2
BSC057N03LSG INFINEON2011+TDSON-830.0 V 73A N通道，场效应管

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